PART |
Description |
Maker |
PDMB300BS12C |
IGBT Module-Dual 300 A, 1200 V, N-CHANNEL IGBT
|
Nihon Inter Electronics Corporation
|
FGPF30N30TTU |
300V, 30A PDP Trench IGBT; Package: TO-220F; No of Pins: 3; Container: Rail 300 V, N-CHANNEL IGBT, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system 35A 1200V NPT Series N-Channel IGBT 35A/ 1200V/ NPT Series N-Channel IGBT 36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
FID35-06C IXYSCORP-FID35-06C |
Fast IGBT Chopper in ISOPLUS i4-PACTM 38 A, 600 V, N-CHANNEL IGBT IGBT Discretes
|
IXYS, Corp. IXYS[IXYS Corporation]
|
BSP92E-6327 BSP92E6327 |
0.2 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET SOT-223, 4 PIN 0.2 A, 240 V, 50 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG SIEMENS A G
|
|